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Molecular materials of the form electron donor-sigma-bridge-electron acceptor (D-s-A) have been synthesized and incorporated into non-centrosymmetric Langmuir-Blodgett (LB) multilayer structures. Electrical characterization has been performed using a metal|(Z-type LB film)|metal (M|LB|M ) junction construction. Current density-voltage data demonstrate striking rectification behaviour. Computational modelling of the electronic structure of the material has been carried out using a firstdoi:10.1039/a902107h fatcat:qfjjaurxcfg5pkfwfbbngesgom