INFLUENCE OF CORRELATION EFFECTS ON THE ELECTRONIC PROPERTIES OF AMORPHOUS SILICON

L. Schweitzer, M. Grünewald, H. Dersch
1981 Le Journal de Physique Colloques  
The influence of correlation effects on the density of states deduced from field-effe6t and capacitance-voltage measurements are considered. A positive Hubbard U is required to account for the observed Curie-law behaviour of the magnetic suszeptibility. Hence, statistics of correlated electrons have to be used rather than Fermi-statistics to calculate the density of states distribution function g(E) from the measured charge density. Within this model g(E) 'differs appreciably from previously published "field effect" densities.
doi:10.1051/jphyscol:19814182 fatcat:tq3ivtwh2nbrvhe3u6yvfrzew4