InGaN∕GaN multi-quantum-well ultraviolet photosensors by capping an unactivated Mg-doped GaN layer

P. C. Chang, C. L. Yu
2007 Applied Physics Letters  
InGaN / GaN multi-quantum-well ͑MQW͒ metal-semiconductor-metal ͑MSM͒ photosensors with an unactivated Mg-doped GaN cap layer were fabricated and characterized. The experimental results showed that dark pits of threading dislocation termination was hardly observed after capping a thin Mg-doped GaN layer. It was also found that we could significantly suppress the dark leakage current by inserting an additional Mg-doped GaN layer due to a thicker and higher potential barrier and effective surface
more » ... effective surface passivation. For InGaN / GaN MQW MSM photosensors with the unactivated Mg-doped GaN cap layer, the responsivity at 380 nm and UV to visible rejection ratio were found to be 0.366 A / W and 1.99ϫ 10 3 under 4 V applied bias.
doi:10.1063/1.2793504 fatcat:bddunlrirnhrpg57bzcbodjpmm