A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2019; you can also visit the original URL.
The file type is
Artificially inscribed notches are often used to pin domain walls (DWs) in ferromagnetic nanowires. The process of selecting and moving the trapped DW in nanowire arrays is an important step for potential applications. The chirality of a DW leads to a pair of pinning positions at the inscribed notches which can be modeled by a symmetric double well. The depinning field depends on the side of the well the DW is trapped with respect to the applied field direction and the DWs can also bedoi:10.1109/tmag.2015.2493511 fatcat:fkcxxqm5mbenrel5m6wamvu2gi