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The influences of the Zr content on the structural, electrical, and electromechanical properties of Pb͓Zr ͑x͒ ,Ti ͑1−x͒ ͔O 3 ͓PZT͑x /1−x͔͒ thin films are investigated in detail. Additionally to measuring all major characteristics of the samples, the electromechanical large-signal behavior is modeled. Raising the Zr content increases the unit cell size and forces the preferred phase to become rhombohedral above the morphotropic phase boundary ͑MPB͒. The increased unit cell size changes thedoi:10.1063/1.2401047 fatcat:k7wou4thazefvh3ixdjppnp6jq