Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements

D. C. Look, R. J. Molnar
1997 Applied Physics Letters  
Temperature-dependent Hall-effect measurements in hydride vapor phase epitaxial GaN grown on sapphire can be well fitted over the temperature range 10-400 K by assuming a thin, degenerate n-type region at the GaN/sapphire interface. This degenerate interfacial region dominates the electrical properties below 30 K, but also significantly affects those properties even at 400 K, and can cause a second, deeper donor to falsely appear in the analysis. However, by using a two-layer Hall model, the
more » ... k mobility and carrier concentration can be accurately ascertained.
doi:10.1063/1.119176 fatcat:bd52tbmy2ned7jfqv55buxz3mq