Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, J. H. Leach
2014 Journal of Applied Physics  
The optical properties of GaN/Al 0.15 Ga 0.85 N multiple quantum wells are examined in 8 K-300 K temperature range. Both polarized CW and time resolved temperature-dependent photoluminescence experiment are performed so that we can deduce the relative contributions of the non-radiative and radiative recombination processes. From the calculation of the proportion of the excitonic population having wave vector in the light cone, we can deduce the variation of the radiative decay time with
more » ... ure. We find part of the excitonic population to be localized in concert with the report of Corfdir et al. (Jpn. J. Appl. Phys., Part 2 52, 08JC01 (2013)) in case of a-plane quantum wells. V
doi:10.1063/1.4865959 fatcat:yffphs7mcbepzijqdxe4ibjqja