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CMOS-MEMS post processing compatible capacitively transduced GeSi resonators
2012
2012 IEEE International Frequency Control Symposium Proceedings
This paper reports on the fabrication, simulation and characterization of post processing compatible poly GeSi MEM resonators. The resonators are fabricated, following a two masks process flow, using 1.5 µm thick low stress, highly conductive insitu boron doped LPCVD poly Ge 0.7 Si 0.3 structural layers. All the process steps are kept below 450 °C to potentially avoid CMOS degradation, a prime concern for post processing compatible MEMS. A narrow gap of ~40 nm is achieved using a sacrificial
doi:10.1109/fcs.2012.6243633
fatcat:d2inspmx2negdnuiywmspbx64y