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Covering codes for multilevel flash memories
2012
2012 Conference Record of the Forty Sixth Asilomar Conference on Signals, Systems and Computers (ASILOMAR)
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Write-once-memory (WOM) and flash codes are used to increase the number of writes in flash memories in order to improve the lifetime of flash-based storage systems. An early construction method of binary WOM codes used cosets of a binary linear code in the writing process, and the covering radius of the code was used to determine the number of writes possible. In this paper, we show how to combine this method with non binary codes for multilevel flash cells, and introduce a new family of
doi:10.1109/acssc.2012.6489155
dblp:conf/acssc/HaymakerK12
fatcat:4fsrjhvzxzcddixysjp6sftwhu