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Raman amplification and lasing in SiGe waveguides
2005
Optics Express
We describe the first observation of spontaneous Raman emission, stimulated amplification, and lasing in a SiGe waveguide. A pulsed optical gain of 16dB and a lasing threshold of 25 W peak pulse power (20 mW average) is observed for a Si 1-x Ge x waveguide with x=7.5%. At the same time, a 40 GHz frequency downshift is observed in the Raman spectrum compared to that of a silicon waveguide. The spectral shift can be attributed to the combination of composition-and strain-induced shift in the
doi:10.1364/opex.13.002459
pmid:19495138
fatcat:yri2xdoj45dfbbl5ebqe34huey