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Monolithically grown planar nanowire (NW) highelectron-mobility transistors (NW-HEMTs) are demonstrated using self-aligned 110 GaAs NWs capped with Si-doped Al x Ga 1−x As shell as the channel on semi-insulating (100) GaAs substrates. The planar Al 0.35 Ga 0.65 As-GaAs NW-HEMT with ∼ 1-μm-long gate exhibits excellent dc characteristics, with extrinsic G m of ∼80 mS/mm and estimated intrinsic G m of ∼260 mS/mm, where the device width is defined as the entire periphery of the NWs. The I ON /I OFFdoi:10.1109/led.2011.2160248 fatcat:o4yab2apyjapdomo6rzbfedq2y