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The electrical resistivity values for a series of pure and doped ͑Co, Mn, Al͒ ZnO epitaxial films grown by pulsed laser deposition were measured with equipment designed for determining the direct current resistivity of high resistance samples. Room-temperature resistances ranging from 7 ϫ 10 1 to 4 ϫ 10 8 ⍀ / sq were measured on vacuum-reduced cobalt-doped ZnO, ͑Al,Co͒ co-doped ZnO, pure cobalt-doped ZnO, Mn-doped ZnO, and undoped ZnO. Using a four-point collinear geometry with golddoi:10.1063/1.3436648 pmid:20590247 fatcat:5w63nd2p5zcc7f2jy7r24ahymy