Measurement of the drift velocity of holes in silicon at high-field strengths

V. Rodriguez, H. Ruegg, M.-A. Nicolet
1967 IEEE Transactions on Electron Devices  
A method is presented which allows the measurement of the velocity-field relationship of charge carriers in a semiconductor. The device used is a four-layer structure. The mode of operation is based on the injection by punch-through of charge carriers into a long depleted region. The velocity can be determined from the V-I characteristic of the device and its geometry. Drift velocity saturation is indicated directly by the form of the characteristic. The method has been applied to the
more » ... ed to the measurement of the highfield velocity of holes in silicon. Technological limitations restricted the measurements to fields above 4.104 V/cm. From this value up to 11 -lo4 V/cm the hole velocity is found to be constant and equal to 7.5'106 cm/s i-5%.
doi:10.1109/t-ed.1967.15894 fatcat:wivbkar7lvh7jncy4xb7stpqpa