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A method is presented which allows the measurement of the velocity-field relationship of charge carriers in a semiconductor. The device used is a four-layer structure. The mode of operation is based on the injection by punch-through of charge carriers into a long depleted region. The velocity can be determined from the V-I characteristic of the device and its geometry. Drift velocity saturation is indicated directly by the form of the characteristic. The method has been applied to thedoi:10.1109/t-ed.1967.15894 fatcat:wivbkar7lvh7jncy4xb7stpqpa