A Novel Lateral Phase-Change Random Access Memory Characterized by Ultra Low Reset Current and Power Consumption

You Yin, Akihira Miyachi, Daisuke Niida, Hayato Sone, Sumio Hosaka
2006 Japanese Journal of Applied Physics  
We have fabricated and studied single lateral phase-change random-access-memory (PRAM), which has a confined Ge 2 Sb 2 Te 5 (GST) channel connected by two wide TiN electrodes of relatively low resistivity. Its switching current for RESET operation could be as low as 4 -20 mA, about one or two orders of magnitude lower than that of the conventional bottom contact PRAM cell. Its corresponding switching power for RESET operation is about 2 -4 mW. The reason for such ultra low RESET current and
more » ... SET current and power could be that Joule heating occurred mainly in the GST channel, instead of the resistive heater in the conventional PRAM cell.
doi:10.1143/jjap.45.l726 fatcat:v4ynzgrrjjfsflle2gck5fxbo4