Front Matter: Volume 8561

Proceedings of SPIE, Brian Culshaw, Yanbiao Liao, Anbo Wang, Xiaoyi Bao, Xudong Fan
2013 Advanced Sensor Systems and Applications V  
Publication of record for individual papers is online in the SPIE Digital Library. SPIEDigitalLibrary.org Paper Numbering: Proceedings of SPIE follow an e-First publication model, with papers published first online and then in print and on CD-ROM. Papers are published as they are submitted and meet publication criteria. A unique, consistent, permanent citation identifier (CID) number is assigned to each article at the time of the first publication. Utilization of CIDs allows articles to be
more » ... citable as soon as they are published online, and connects the same identifier to all online, print, and electronic versions of the publication. SPIE uses a six-digit CID article numbering system in which:  The first four digits correspond to the SPIE volume number.  The last two digits indicate publication order within the volume using a Base 36 numbering system employing both numerals and letters. These two-number sets start with 00, 01, 02, 03, 04, 05, 06, 07, 08, 09, 0A, 0B ... 0Z, followed by 10-1Z, 20-2Z, etc. The CID Number appears on each page of the manuscript. The complete citation is used on the first page, and an abbreviated version on subsequent pages. Numbers in the index correspond to the last two digits of the six-digit CID Number. ABSTRACT Spectral and power characteristics of QD stripe lasers operating in two-state lasing regime have been studied in a wide range of operation conditions. It was demonstrated that neither self-heating nor increase of the homogeneous broadening are responsible for quenching of the ground-state lasing beyond the two-state lasing threshold. It was found that difference in electron and hole capture rates strongly affects light-current curve. Modulation p-type doping is shown to enhance the peak power of GS lasing transition. Microring and microdisk structures (D = 4-9 μm) comprising 1.3 μm InAs/InGaAs quantum dots have been fabricated and studied by µ-PL and NSOM. Ground-state lasing was achieved well above root temperature (up to 380 K). Effect of inner diameter on threshold characteristics was evaluated.
doi:10.1117/12.2018576 fatcat:6r2otqgaozdxfnxfphyxmq4lje