Time-resolved microphotoluminescence of epitaxial laterally overgrown GaN

J. Holst, A. Kaschner, A. Hoffmann, P. Fischer, F. Bertram, T. Riemann, J. Christen, K. Hiramatsu, T. Shibata, N. Sawaki
1999 Applied Physics Letters  
Epitaxial laterally overgrown GaN ͑ELOG͒ structures are microscopically characterized using spatially resolved microphotoluminescence ͑micro-PL͒ and time-dependent spectroscopy. To understand the influence of the different lateral growth mechanisms on the peak position and the temporal behavior of the transition lines, we correlated the different micro-PL emission spectra with results of spatially resolved time-dependent spectroscopy experiments.
doi:10.1063/1.125416 fatcat:6u7mxf7p55bd7b4mhrkrgllpo4