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Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer
2019
IEICE Electronics Express
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By skillfully applying the voltage bias, we firstly observed radiation-enhanced channel length modulation (CLM) of main transistor in 130 nm partially-depleted SOI nMOSFETs. And we found the radiationenhanced CLM under Pass-Gate bias is more severe than that under ON bias, which reveals that the radiation-induced positive trapped charges in buried oxide is more responsible for this effect. A partially full depletion model is used to interpret this effect. And a TCAD simulation was used to
doi:10.1587/elex.16.20190454
fatcat:em3sjbfh4vb7nj76wc6jq7jxre