Infrared spectroscopy of hole-doped ABA-stacked trilayer graphene

N. Ubrig, P. Blake, D. van der Marel, A. B. Kuzmenko
2012 Europhysics letters  
Using infrared spectroscopy, we investigate bottom gated ABA-stacked trilayer graphene subject to an additional environment-induced p-type doping. We find that the Slonczewski-Weiss-McClure tight-binding model and the Kubo formula reproduce the gate voltage-modulated reflectivity spectra very accurately. This allows us to determine the charge densities and the potentials of the π-band electrons on all graphene layers separately and to extract the interlayer permittivity due to higher energy bands.
doi:10.1209/0295-5075/100/58003 fatcat:rfo4hhghdndepmnmddqabgsugq