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09 - Silicon Carbide Sensor Systems for Harsh Environment Market Applications
2015
The silicon carbide (SiC) processing technology for 4 inch wafers, with 6 inch in the planning phase, has reached matureness of mass production. Field effect devices based on silicon carbide, SiC-FET, employing a catalytic metal such as porous iridium (Ir) as the gate material change the current-voltage characteristics due to gas interactions with the gate metallization. Several batches of sensor devices have improved the device performance and gas response characteristics and, together with
doi:10.5162/4eunetair2015/09
fatcat:72jtxtkcgjdslarngyzur4lxsi