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Simulation of X-Ray Diffraction Spectra for AlN/GaN Multiple Quantum Well Structures on AlN(0001) with Interface Roughness and Variation of Vertical Layers Thickness
2018
Metallofizika i novejsie tehnologii
A detailed XRD analysis of AlN/GaN multiple quantum well (MQW) structures grown on AlN(0001) substrates is proposed. The effect of roughness on the 2 scans measured in Bragg diffraction for symmetrical reflections is investigated together with the effect of depth variation of the well and barrier thickness. As shown, the magnitude of depth variation of the well and barrier thickness results in an asymmetrical broadening of the satellite peaks of the 2 scans. Roughness causes their symmetrical
doi:10.15407/mfint.40.06.0759
fatcat:pix3bvg27vfofjpcuzkl244vki