Here, deposition of SiO2 film by RF-sputtering onto the anodic Ta2O5 film for fabrication of an SiO2-Ta2O5 thin film capacitor is reported. Reproducible film deposition rate is achieved within the accuracy of 3% by decreasing the influence of adsorbed gases in the vacuum chamber. Argon pressure is adjusted in order to obtain the uniform deposition of the SiO2 film. The thickness distribution is less than 3% wihtin the area covered by 70% of target radius. The standard deviation of capacitance

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... e to the distribution of SiO2 films is about 2.5% of the average capacitance. The substate temperature should be precisely controlled during RF-sputtering for the realization of the capacitor with excellent electrical characteristics. The high substrate temperature causes deterioration of Ta2O5, but the SiO2 film deposited at low temperature has poor life stability and large capacitance change in moisture. The optimum substrate temperature is about 150 °C for the SiO2 film deposition onto the anodic Ta2O5 film.