Impact of time dependent dielectric breakdown and stress induced leakage current on the reliability of (Ba,Sr)TiO/sub 3/ thin film capacitors for Gbit-scale DRAMs

S. Yamamichi, A. Yamaichi, D. Park, C. Hu
International Electron Devices Meeting. IEDM Technical Digest  
Time dependent dielectric breakdown (TDDB) and stress-induced leakage current (SILC) are investigated for the reliability of (Ba 0.5 Sr 0.5 )TiO 3 (BST) thin films. TDDB characteristics show a lifetime longer than 10 years at +1V for BST films with an SiO 2 equivalent thickness (t eq ) of 0.70 nm. The breakdown is strongly affected by leakage current properties, and does not depend on the dielectric constant. SILC is studied at +1V in time domain after stress charge injection into BST films. 10
more » ... into BST films. 10 year operation for Gbitscale DRAMs can be guaranteed in spite of the charge loss caused by SILC.
doi:10.1109/iedm.1997.650377 fatcat:6wh2ygvbnnc6rpzplusr2gaipu