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Quantum Hall effect in Bernal stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition
2012
Physical Review B
We examine the quantum Hall effect in bilayer graphene grown on Cu substrates by chemical vapor deposition. Spatially resolved Raman spectroscopy suggests a mixture of Bernal (A-B) stacked and rotationally faulted (twisted) domains. Magnetotransport measurements performed on bilayer domains with a wide 2D band reveal quantum Hall states (QHSs) at filling factors ν=4, 8, 12 consistent with a Bernal stacked bilayer, while magnetotransport measurements in bilayer domains defined by a narrow 2D
doi:10.1103/physrevb.85.201408
fatcat:qcnp437bcnf3vchmulgf4zrhni