Low temperature MOCVD of Ta2O5 dielectric thin films from Ta[NC(CH3)3][OC(CH3)3]3 and O2

Hirokazu CHIBA, Ken-ichi TADA, Taishi FURUKAWA, Toshiki YAMAMOTO, Tadahiro YOTSUYA, Noriaki OSHIMA, Hiroshi FUNAKUBO
2016 Journal of the Ceramic Society of Japan  
Ta 2 O 5 thin films were deposited at 155400°C on amorphous SiO 2 and Pt/TiO x /SiO 2 /Si substrates by metal organic chemical vapor deposition (MOCVD) from tri(tert-butoxy)(isopropylimido)tantalum [Ta[NCH(CH 3 ) 2 ][OC(CH 3 ) 3 ] 3 ]O 2 , tri(tert-butoxy)-(tert-butylimido)tantalum [Ta[NC(CH 3 ) 3 ][OC(CH 3 ) 3 ] 3 ]O 2 and pentaethoxy tantalum [Ta(OC 2 H 5 ) 5 ]O 2 systems. Temperature dependency of the deposition rate was almost the same for the films from Ta[NCH(CH 3 ) 2 ][OC(CH 3 ) 3 ] 3 O
more » ... [OC(CH 3 ) 3 ] 3 O 2 and Ta[NC(CH 3 ) 3 ]-[OC(CH 3 ) 3 ] 3 O 2 systems irrespective of the kinds of substrates, and the deposition rate of these two systems was higher than that of Ta(OC 2 H 5 ) 5 O 2 system for all deposition temperature range within the present study. Dielectric properties of Ta 2 O 5 thin films deposited on Pt/TiO x /SiO 2 /Si substrates at 200°C from Ta[NC(CH 3 ) 3 ][OC(CH 3 ) 3 ] 3 O 2 system and at 300°C from Ta(OC 2 H 5 ) 5 O 2 system were also investigated. In spite of their 100°C lower deposition temperature, the Ta 2 O 5 films from Ta[NC(CH 3 ) 3 ]-[OC(CH 3 ) 3 ] 3 O 2 system showed lower leakage current density and almost the same dielectric constant with those from Ta(OC 2 H 5 ) 5 O 2 system.
doi:10.2109/jcersj2.15245 fatcat:acensszpjjbvtmuw6hmumlefcm