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Deposition and application of a Mo–N back contact diffusion barrier yielding a 12.0% efficiency solution-processed CIGS solar cell using an amine–thiol solvent system

Soňa Uličná, Panagiota Arnou, Ali Abbas, Mustafa Togay, Liam M. Welch, Martin Bliss, Andrei V. Malkov, John M. Walls, Jake W. Bowers
2019 Journal of Materials Chemistry A  

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The use of a Mo–N barrier for solution-processed CIGS results in reduced MoSe2 formation. This enabled longer selenization time, enhanced grain growth and performance.
doi:10.1039/c8ta12089g fatcat:nbr2zia6fvbhjclluqthhknh7y
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Soňa Uličná, Panagiota Arnou, Ali Abbas, Mustafa Togay, Liam M. Welch, Martin Bliss, Andrei V. Malkov, John M. Walls, Jake W. Bowers. "Deposition and application of a Mo–N back contact diffusion barrier yielding a 12.0% efficiency solution-processed CIGS solar cell using an amine–thiol solvent system." Journal of Materials Chemistry A 7.12 (2019)