Ku-band AlGaN/GaN-HEMT with over 30% of PAE

Kazutaka Takagi, Shinji Takatsuka, Yasushi Kashiwabara, Shinichiro Teramoto, Keiichi Matsushita, Hiroyuki Sakurai, Ken Onodera, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda
2009 2009 IEEE MTT-S International Microwave Symposium Digest  
AlGaN/GaN High Electron Mobility Transistors (HEMTs) were improved for X-band and Kuband applications. The power added efficiency (PAE) was achieved over 40% for X-band and over 30% for Ku-band. The developed devices combined two AlGaN/GaN HEMTs of 12 mm gate periphery and exhibited the output power of over 50W. An AlGaN/GaN HEMT with four dies of 12 mm gate periphery was developed and exhibited the output power of over 120W. Index Terms -AlGaN, GaN, HEMT, PAE, X-band, Kuband. PAE(%) X-Band
more » ... . PAE(%) X-Band (CW) X-Band (Pulse) X-band (CW) Ku-band (CW) this work X-Band Ku-Band Microwave Symposium Digest (MTT), 2009 IEEE MTT-S International IEEE
doi:10.1109/mwsym.2009.5165732 fatcat:i2jzb3flzfg2xl6o6v2f3qgwtq