The photon−stimulated (lesorp七ion of gases a七 七he oxide surface has experimen七ally c。nfirmedbys。mew。rkers1−3).In七he pho七〇n−stimulated desorp七ion process, the desorp七iQn rate which is usually extremely low a七roo皿 temperature, is accelera七ed by injecting holes generated by photon excita七ion intQ chemisorp七ion sta七es. In or(1er to apPly the pho七〇n−stimulated desorp七ion to solid−s七ate gas sensQrs7 we designedaZnO−SiO2−Audeviceasaph・t・n− assisted。xygensens。r4).Inacc。rdancewith the theoretical

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... ion, 七he rec七ifica七iQn charac七eristics・faZnO−SiO2−Audeviceare significantly broken after uv irradiation, an(l the recovery rate of the rectifica七ion charac七eris七ic isdependent・n七heambientO2 par七ial pressure. HQwever, 七he recovery rate was toQ slow to be use(1 as an oxygen gas sensoL In the present communica七ion, 七he sens・rpr。per七ies・f七heZnO−SiO2−Audevice are measured (luring hv irradiation and the reason for 七he slow response is (1iscussed. 2。 E圏ERIM】囲丁」U ThefabricatiQnpr・cedure・faZnO−SiO2−Au devfcewasdescribedinaprevi。uspaper4). The sputtered ZnO film ha(1 a c−axis ・Qrienta− tion Perpendlicular to 七he film surface。 From scanning elec七ron microscopic observatiQn, it was found that 七he ZnO film consis七s of