Multi-Layer Model for Stressor Film Deposition

K.V. Loiko, V. Adams, D. Tekleab, B. Winstead, X.-z. Bo, P. Grudowski, S. Goktepeli, S. Filipiak, B. Goolsby, V. Kolagunta, M.C. Foisy
2006 2006 International Conference on Simulation of Semiconductor Processes and Devices  
Multi-layer simulation is proposed for accurate modeling of stressor film deposition. Multi-layer simulation subdivides a single deposition into a series of deposition and relaxation steps to emulate mechanical quasi-equilibrium during the physical deposition process. Only the multi-layer model is able to simultaneously match the experimental data on drive current vs. etch-stop layer stress, poly pitch, source/drain recess, and spacer stress. I.
doi:10.1109/sispad.2006.282853 fatcat:3ybvmnbk7zclbdfe4y76riq2rq