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Multi-Layer Model for Stressor Film Deposition
2006
2006 International Conference on Simulation of Semiconductor Processes and Devices
Multi-layer simulation is proposed for accurate modeling of stressor film deposition. Multi-layer simulation subdivides a single deposition into a series of deposition and relaxation steps to emulate mechanical quasi-equilibrium during the physical deposition process. Only the multi-layer model is able to simultaneously match the experimental data on drive current vs. etch-stop layer stress, poly pitch, source/drain recess, and spacer stress. I.
doi:10.1109/sispad.2006.282853
fatcat:3ybvmnbk7zclbdfe4y76riq2rq