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A defect-tolerant word-oriented static RAM with built-in self-test and self-reconfiguration
1996 Proceedings. Eighth Annual IEEE International Conference on Innovative Systems in Silicon
In this paper, an efficient method for self-test and self-reconfiguration for a word-oriented single-port static RAM is presented. First, a suitable test algorithm is chosen and implemented as a built-in self-test (BIST) with low area overhead. Further, a circuit is developed which analyses the BIST signature and, in the event of a detected error, automatically reconfigures the memory utilising redundant cells in form of rows and blocks replacing the defective ones. In the presented approach a
doi:10.1109/iciss.1996.552419
fatcat:l7i35t52frdg5evaxhdb5wscry