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We demonstrate ultralow ohmic contact resistance to antimonide-based, p-channel quantum-well field-effect transistor (QW-FET) structures using a new p + -InAs/InAsSb cap structure. The incorporation of a p + -InAsSb layer enables the use of a thicker cap with lower sheet resistance, resulting in an improved contact resistivity. Using a Pd-based ohmic scheme, the composite cap structure resulted in a 4× reduction in contact resistance compared with a standard p + -InAs cap. This translates intodoi:10.1109/led.2015.2421337 fatcat:nqaixh3ljfgv7nxz2ab3mnvxnq