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Fabrication and Characterization of N-Type Zinc Oxide/P-Type Boron Doped Diamond Heterojunction
2015
Journal of Electrical Engineering
Diamond and ZnO are very promising wide-bandgap materials for electronic, photovoltaic and sensor applications because of their excellent electrical, optical, physical and electrochemical properties and biocompatibility. In this contribution we show that the combination of these two materials opens up the potential for fabrication of bipolar heterojunctions. Semiconducting boron doped diamond (BDD) thin films were grown on Si and UV grade silica glass substrates by HFCVD method with various
doi:10.2478/jee-2015-0045
fatcat:5ooocp3euvd5rihxi3vsbc4dzq