A high-performance Schottky diode based on a 600-μm-thick Cr-doped β-Ga2O3 single crystal has been fabricated using SnOx as the Schottky contact. The SnOx film was deposited in argon/oxygen mixture gas to ensure an oxygen-rich stoichiometry in Ga2O3 near the Schottky interface, thus reducing oxygen deficiency related interface state density. The SnOx film included three components: Sn, SnO, and SnO2, as revealed by X-ray photoelectron spectroscopy characterization. The high quality Ga2O3 single

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... crystal grown by an edge-defined film-fed method has a carrier concentration of 1.0 × 10 18 cm -3 and an electron mobility of ~90 cm 2 /Vs. Current density-voltage characteristics of the Schottky diode demonstrated high performance with a large barrier height of 1.17 eV, a close-to-unity ideality factor of 1.02, and a high rectification ratio beyond 10 10 . Frequency-dependent capacitance and conductance analysis revealed that the maximum active interface state density is 5.92 × 10 13 at a frequency of 7 kHz. Index Terms-Ga2O3, Schottky barrier diodes (SBDs), tin oxide (SnOx).