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Pure Cu and Cu with 1 at.% and 2.6 at.% Cr films were sputtered on (100) single crystal Si wafers in the presence of native suboxide (SiO x ). Samples were vacuum-annealed to investigate effects of Cr on the microstructural characteristics of Cu films. Cr refines the columnar structure and decreases the surface roughness of Cu films. Upon annealing, most films undergo the process of crystallite growth and coalescence. Cross-sectional images show that Cr stabilizes the columnar structure anddoi:10.1088/1742-6596/152/1/012006 fatcat:j4asazpx3jcpzihmarnyg3qor4