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Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition
Journal of Applied Physics
Exciton recombination dynamics in a -plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence a-plane InGaN/GaN multiple quantum wells of different widths ranging from 3 to 12 nm grown on r-plane sapphire by metal-organic chemical vapor deposition were investigated. The peak emission intensity of the photoluminescence ͑PL͒ reveals a decreasing trend as the well width increases from 3 to 12 nm. Low temperature ͑9 K͒ time-resolved PL ͑TRPL͒ study shows that the sampledoi:10.1063/1.3013435 fatcat:ixmelrtzmngobjtpok4jliueae