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In this letter, high-performance bottom-gate (BG) low-temperature poly-silicon thin-film transistors (TFTs) with excimer laser crystallization have been demonstrated using selfaligned (SA) backside photolithography exposure. The grains with lateral grain size of about 0.75 µm could be artificially grown in the channel region via the super-lateral-growth phenomenon fabricated by excimer laser irradiation. Consequently, SA-BG TFTs with the channel length of 1 µm exhibited field-effect mobilitydoi:10.1109/led.2007.899326 fatcat:2a2euyjyanf5viz44bm6rzq4ba