Optical absorption edge and luminescence in phosphorous-implanted Cu6PS5X (X = I, Br) single crystals

I. P. Studenyak
2011 Semiconductor Physics, Quantum Electronics & Optoelectronics  
Implantation of Cu 6 PS 5 X (X = I, Br) single crystals was carried out for different values of fluence with using P + ions; the energy of ions was 150 keV. For the implanted Cu 6 PS 5 X crystals, the structural studies were performed using the scanning electron microscopy technique and energy-dispersive X-ray spectroscopy. Spectrometric studies of optical absorption edge and luminescence were carried out within the temperature range 77...320 K. The influence of ionic implantation on
more » ... ation on luminescence spectra, parameters of Urbach absorption edge, parameters of exciton-phonon interaction as well as ordering-disordering processes in Cu 6 PS 5 X (X = I, Br) superionic conductors have been studied.
doi:10.15407/spqeo14.03.287 fatcat:epijdkynkzgbtfq3myaobeaghy