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Platform for JFET-based sensing of RF MEMS resonators in CMOS technology
2011
2011 International Electron Devices Meeting
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This paper presents an RF MEMS resonator with embedded junction field effect transistor (JFET) for efficient electrical detection of the high quality factor acoustic resonance. A homogenous single-crystal silicon resonator is excited in its fundamental thickness extensional resonant mode at 1.61 GHz with a quality factor of 25,900. This device can be fully integrated into a typical SOI CMOS technology with minimal modifications to the existing front-end process. Furthermore, it achieves an
doi:10.1109/iedm.2011.6131591
fatcat:x6zdfrijsbhojpnjllkmdjcsem