Ordering-induced direct-to-indirect band gap transition in multication semiconductor compounds

Ji-Sang Park, Ji-Hui Yang, Ana Kanevce, Sukgeun Choi, Ingrid L. Repins, Su-Huai Wei
2015 Physical Review B  
Using first-principles calculations and symmetry analysis, we show that as cation atoms in a zincblende-based semiconductor are replaced through atomic mutation (e.g., evolve from ZnSe to CuGaSe 2 to Cu 2 ZnGeSe 4 ), the band gaps of the semiconductors will become more and more indirect because of the band splitting at the zone boundary, and in some cases will even form the segregating states. For example, although ZnSe is a direct band gap semiconductor, quaternary compounds Cu 2 ZnGeSe 4 and
more » ... Cu 2 ZnGeSe 4 and Cu 2 ZnSnSe 4 can be indirect band gap semiconductors if they form the primitive mixed CuAu ordered structures. We also find that the stability and the electronic structure of the quaternary polytypes with different atomic ordering are almost negative-linearly correlated. We suggest that these intrinsic properties of the multi-cation semiconductors can have a large influence on the design and device performance of these materials.
doi:10.1103/physrevb.91.075204 fatcat:nvjp7qq4jneqpjqamvyvxxawom