Analysis of erratic bits in flash memories

A. Chimenton, P. Pellati, P. Olivo
2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167)  
This work presents experimental results concerning erratic behaviors in Flash memories obtained by tracking the threshold voltage dynamics during any single erase operation and providing a deeper insight into their physical nature. The particular shape of the experimental erase curves allows the derivation of a nearly linear relationship between the amplitude of erratic threshold shifts and the equivalent barrier height controlling Fowler-Nordheim injection.
doi:10.1109/relphy.2001.922875 fatcat:stv2f2kliva3xmarrfrroo3hia