Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser Annealing

Joshua T. Smith, Christian Sandow, Saptarshi Das, Renato A. Minamisawa, Siegfried Mantl, Joerg Appenzeller
2011 IEEE Transactions on Electron Devices  
We have experimentally established that the inverse subthreshold slope S of a Si nanowire tunneling field-effect transistor (NW-TFET) array can be within 9% of the theoretical limit when the doping profile along the channel is properly engineered. In particular, we have demonstrated that combining excimer laser annealing with a low-temperature rapid thermal anneal results in an abrupt doping profile at the source/channel interface as evidenced by the electrical characteristics. Gate-controlled
more » ... unneling has been confirmed by evaluating S as a function of temperature. The good agreement between our experimental data and simulation allows performance predictions for more aggressively scaled TFETs. We find that Si NW-TFETs can be indeed expected to deliver S-values below 60 mV/dec for optimized device structures. Index Terms-Excimer laser annealing (ELA), nanowire tunneling field-effect transistor (NW-TFET), steep-slope transistors, ultrathin-body silicon-on-insulator (SOI).
doi:10.1109/ted.2011.2135355 fatcat:uk44fn6k2feopiqueopbk2lijy