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Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser Annealing
2011
IEEE Transactions on Electron Devices
We have experimentally established that the inverse subthreshold slope S of a Si nanowire tunneling field-effect transistor (NW-TFET) array can be within 9% of the theoretical limit when the doping profile along the channel is properly engineered. In particular, we have demonstrated that combining excimer laser annealing with a low-temperature rapid thermal anneal results in an abrupt doping profile at the source/channel interface as evidenced by the electrical characteristics. Gate-controlled
doi:10.1109/ted.2011.2135355
fatcat:uk44fn6k2feopiqueopbk2lijy