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This letter investigates the degradation mechanism of polycrystalline silicon thin-film transistors with a silicon-oxidenitride-oxide-silicon structure under OFF-state stress. During the electrical stress, the hot hole generated from band-to-band tunneling process will inject into gate dielectric, and the significant ON-state degradation (more than 1 order) indicates that the interface states are accompanied with hot-hole injection. In addition, the asymmetric I-V characteristics indicate thatdoi:10.1109/led.2010.2079912 fatcat:pyu2q3t33bdupmkj74zbmiwwtu