18aA06 MOMBEによるサファイア(0001)上への立方晶・六方晶GaNのエピタキシャル成長(立方晶GaN結晶成長を考える,ナノ・エピシンポジウム,第35回結晶成長国内会議)
18aA06 Growth of Cubic- and Hexagonal-GaN on Sapphire(0001) by MOMBE(NCCG-35)

Jun Suda
2005 Journal of the Japanese Association for Crystal Growth  
Growth ofcubic − and hexagona1 − GaN on sapphire ( 0001 ) substrates is presented . GaN was grown by metal − organic moleeular − beam epitaxy ( MOMBE ) using triethyl gallium ( TEGa ) and Tf− plasma excited active nitrogen . Under a N − rich condition , the odynamically
doi:10.19009/jjacg.32.3_205 fatcat:lsojogg33jdvtb4ql7kbdgz22a