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Formation of light-emitting FeSi2 in Fe thin films on ion-implanted (111)Si

H. T. Lu, L. J. Chen, Y. L. Chueh, L. J. Chou
2003 Journal of Applied Physics  

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The formation of iron silicides on ͑111͒Si and effects of ion implantation on phase transformation have been investigated by sheet resistance measurements, grazing-incidence x-ray diffractometry, transmission electron microscopy, energy-dispersive x-ray analysis, and secondary ion mass spectroscopy. Ion implantation was found to enhance the growth of light-emitting ␤-FeSi 2 . Phase transformation from FeSi to ␤-FeSi 2 begins at 600°C and completes at 700°C. P ϩ implantation was found to lower
more » ... e transformation temperature from 700 to 600°C. Wider than 20 nm As-decorated grain boundaries were observed in the As ϩ -implanted samples annealed at 600-700°C. The As-rich grain boundaries disappeared after 800°C annealing, leading to a decrease in resistivity.
doi:10.1063/1.1534379 fatcat:tka6bhxwkzdere4p4ntehaviiu
Citation

H. T. Lu, L. J. Chen, Y. L. Chueh, L. J. Chou. "Formation of light-emitting FeSi2 in Fe thin films on ion-implanted (111)Si." Journal of Applied Physics 93.3 (2003) 1468-1471