Formation of light-emitting FeSi2 in Fe thin films on ion-implanted (111)Si

H. T. Lu, L. J. Chen, Y. L. Chueh, L. J. Chou
2003 Journal of Applied Physics  
The formation of iron silicides on ͑111͒Si and effects of ion implantation on phase transformation have been investigated by sheet resistance measurements, grazing-incidence x-ray diffractometry, transmission electron microscopy, energy-dispersive x-ray analysis, and secondary ion mass spectroscopy. Ion implantation was found to enhance the growth of light-emitting ␤-FeSi 2 . Phase transformation from FeSi to ␤-FeSi 2 begins at 600°C and completes at 700°C. P ϩ implantation was found to lower
more » ... as found to lower the transformation temperature from 700 to 600°C. Wider than 20 nm As-decorated grain boundaries were observed in the As ϩ -implanted samples annealed at 600-700°C. The As-rich grain boundaries disappeared after 800°C annealing, leading to a decrease in resistivity.
doi:10.1063/1.1534379 fatcat:tka6bhxwkzdere4p4ntehaviiu