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In this article, sub-10 nm top width nanowire In0.53Ga0.47As gate-all-around (GAA) MOSFETs with improved subthreshold characteristics and reliability are demonstrated. These devices exhibit a significant improvement in the subthreshold performances with subthreshold swing (SS) of 70 mV/dec, drain induced barrier lowering (DIBL) of 46 mV/V, and off-current (Ioff) of 1.6 × 10 -4 µA/µm for InGaAs GAA MOSFETs. Effective control of short channel effects (SCEs) is confirmed by the error bar ofdoi:10.1109/jeds.2022.3149954 fatcat:prv6mo66gjaylfigl2bf673sfu