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ULTRARAM is a III−V compound semiconductor memory concept that exploits quantum resonant tunneling to achieve nonvolatility at extremely low switching energy per unit area. Prototype devices are fabricated in a 2 × 2 memory array formation on GaAs substrates. The devices show 0/1 state contrast from program/erase (P/E) cycles with 2.5 V pulses of 500-µs duration, a remarkable switching speed for a 20 µm gate length. Memory retention is tested for 8 × 10 4 s, whereby the 0/1 states show adequatedoi:10.1109/ted.2021.3064788 fatcat:oc5r7pj5rnap3jpsfbvijrqkbe