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Simulation of Semiconductor Processes and Devices 2001
Experiments of As-doped poly-silicon deposition have shown that under certain process conditions step coverages > 1 can be achieved. We have developed a new model for the simulation of As-doped poly-silicon deposition, which takes into account surface coverage dependent sticking coefficients and surface coverage dependent As incorporation and desorption rates. The additional introduction of Langmuir type time-dependent surface coverage enabled the reproduction of the bottom-up filling of thedoi:10.1007/978-3-7091-6244-6_27 fatcat:fzzdtfv7mndkdglqiognjg7qhy