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Theory and simulation of spin transport in antiferromagnetic semiconductors: Application to MnTe
2011
Physical Review B
We study in this paper the parallel spin current in an antiferromagnetic semiconductor thin film where we take into account the interaction between itinerant spins and lattice spins. The spin model is an anisotropic Heisenberg model. We use here the Boltzmann's equation with numerical data on cluster distribution obtained by Monte Carlo simulations and cluster-construction algorithms. We study the cases of degenerate and non-degenerate semiconductors. The spin resistivity in both cases is shown
doi:10.1103/physrevb.84.024428
fatcat:zorbx7xzkzg2he76qjfkweytlq