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Study of structural and electrical properties of ferroelectric HZO films obtained by single-target sputtering
In this work, we study the structural and electrical properties of Hafnium Zirconium Oxide (HZO) thin films deposited by Hf 0.5 Zr 0.5 O 2 singletarget sputtering to fabricate a TiN/(14-/22 nm-thick) HZO/TiN stack. The structural analysis of the HZO thin films performed by in situ x-ray diffraction upon thermal annealing shows the formation of the HZO orthorhombic phase at annealing temperatures as low as 370 ○ C. X-ray photoelectron spectroscopy interestingly reveals an identical chemicaldoi:10.1063/5.0058656 fatcat:rnzsijajlzczxo5qv4zgnmitcy