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Asymmetric Electrical Properties of Half Corbino Hydrogenated Amorphous Silicon Thin-Film Transistor and Its Applications to Flat Panel Displays
Japanese Journal of Applied Physics
The half-Corbino hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) were fabricated with a five-photomask process used in the processing of the active matrix liquid-crystal displays (AM-LCD). We showed that the a-Si:H half-Corbino TFTs have the asymmetric electrical characteristics under different drain-bias conditions. In comparison to half-Corbino TFT with unpatterned gate electrode, the device parasitic capacitance can be significantly reduced by patterning the gatedoi:10.7567/jjap.50.074203 fatcat:meomjm2eabb6negnt2s6niuk7i