Analysis of Surface Generation Mechanisms in MOS Capacitors

F. Kong, P. Tanner, L. Hold, J. Han, S. Dimitrijev
2006 25th International Conference on Microelectronics  
This paper demonstrates the extraction of MOS capacitor minority carrier generation lifetime and surface generation velocity from the measurement of deep-depletion capacitance transient. It is shown that the bulk generation lifetime, the lateral surface generation, and the surface generation under the gate can be separately determined by measuring test structures with different perimeter-to-area ratios.
doi:10.1109/icmel.2006.1651017 fatcat:ttu7mzsyknhftno6vdovrp5v4y